CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE).

Y. H. Xie, Y. Y. Wu, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Electrically active deep-level defects in Si MBE films are studied. The Si substrates used for the MBE growths are cleaned using several different methods, which result in different degrees of contamination on the Si substrate surfaces. The correlations between the degrees of contamination and the observed deep level defects are presented. The spatial distributions of the observed defects are obtained using a defect profiling technique. A deep level defect with E//c-E//t approximately equals 0. 58 eV is consistently obtained. The nature and origin of this defect is discussed.

Original languageEnglish
Pages (from-to)93-101
Number of pages9
JournalProceedings - The Electrochemical Society
Volume85-7
Publication statusPublished - 1985

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE).'. Together they form a unique fingerprint.

Cite this