CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).

This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.