@inproceedings{adec96b43233488c8a433f789decae8f,
title = "CHARACTERIZATION OF EPITAXIAL CoSi//2 FILMS GROWN ON less than 111 greater than Si.",
abstract = "X-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi//2 films grown on less than 111 greater than Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550-750 degree C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925 degree C for 10 min, Co and Si co-deposition on a 580 degree C hot substrate.",
author = "Hamdi, {A. H.} and Nicolet, {M. A.} and Kao, {Y. C.} and M. Tejwani and Wang, {K. L.}",
year = "1985",
language = "English",
isbn = "0931837065",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "355--361",
editor = "J.B. Roberto and R.W. Carpenter and M.C. Wittels",
booktitle = "Materials Research Society Symposia Proceedings",
}