Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

C. Y. Chang, Y. K. Su, M. K. Lee, L. G. Chen, Mau-phon Houng

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

Original languageEnglish
Pages (from-to)24-29
Number of pages6
JournalJournal of Crystal Growth
Volume55
Issue number1
DOIs
Publication statusPublished - 1981 Jan 1

Fingerprint

Metallorganic vapor phase epitaxy
Epilayers
Epitaxial layers
Growth temperature
vapor phase epitaxy
low pressure
Hall mobility
Growth kinetics
Optical microscopy
Surface morphology
Mirrors
Fluxes
Thin films
Scanning electron microscopy
Electrons
Temperature
reactors
gallium arsenide
mirrors
microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chang, C. Y. ; Su, Y. K. ; Lee, M. K. ; Chen, L. G. ; Houng, Mau-phon. / Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source. In: Journal of Crystal Growth. 1981 ; Vol. 55, No. 1. pp. 24-29.
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Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source. / Chang, C. Y.; Su, Y. K.; Lee, M. K.; Chen, L. G.; Houng, Mau-phon.

In: Journal of Crystal Growth, Vol. 55, No. 1, 01.01.1981, p. 24-29.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

AU - Chang, C. Y.

AU - Su, Y. K.

AU - Lee, M. K.

AU - Chen, L. G.

AU - Houng, Mau-phon

PY - 1981/1/1

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N2 - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

AB - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

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