TY - JOUR
T1 - Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source
AU - Chang, C. Y.
AU - Su, Y. K.
AU - Lee, M. K.
AU - Chen, L. G.
AU - Houng, M. P.
N1 - Funding Information:
The authors would like to thank Mr. C.S. Huang for assistance in the growth experiment, and Miss S.M. Wang for helpful discussions and suggestions in the manuscript. The financial support of the National Science Council is deeply appreciated.
PY - 1981/10
Y1 - 1981/10
N2 - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.
AB - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.
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U2 - 10.1016/0022-0248(81)90266-9
DO - 10.1016/0022-0248(81)90266-9
M3 - Article
AN - SCOPUS:49049152584
SN - 0022-0248
VL - 55
SP - 24
EP - 29
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -