Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

C. Y. Chang, Y. K. Su, M. K. Lee, L. G. Chen, M. P. Houng

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

Original languageEnglish
Pages (from-to)24-29
Number of pages6
JournalJournal of Crystal Growth
Volume55
Issue number1
DOIs
Publication statusPublished - 1981 Oct

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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