Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

C. Y. Chang; Y. K. Su; M. K. Lee; L. G. Chen; M. P. Houng

doi:10.1016/0022-0248(81)90266-9

Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

C. Y. Chang
, Y. K. Su
, M. K. Lee
, L. G. Chen
, M. P. Houng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm²/V · s, is lower than 10¹³ cm^-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm³/min and pressure of reactor=20 Torr.

Original language	English
Pages (from-to)	24-29
Number of pages	6
Journal	Journal of Crystal Growth
Volume	55
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(81)90266-9
Publication status	Published - 1981 Oct

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(81)90266-9

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@article{6d230c5fbff64a50b1eee1eb8f12f10d,

title = "Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source",

abstract = "A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.",

author = "Chang, \{C. Y.\} and Su, \{Y. K.\} and Lee, \{M. K.\} and Chen, \{L. G.\} and Houng, \{M. P.\}",

note = "Funding Information: The authors would like to thank Mr. C.S. Huang for assistance in the growth experiment, and Miss S.M. Wang for helpful discussions and suggestions in the manuscript. The financial support of the National Science Council is deeply appreciated.",

year = "1981",

month = oct,

doi = "10.1016/0022-0248(81)90266-9",

language = "English",

volume = "55",

pages = "24--29",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1",

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TY - JOUR

T1 - Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

AU - Chang, C. Y.

AU - Su, Y. K.

AU - Lee, M. K.

AU - Chen, L. G.

AU - Houng, M. P.

N1 - Funding Information: The authors would like to thank Mr. C.S. Huang for assistance in the growth experiment, and Miss S.M. Wang for helpful discussions and suggestions in the manuscript. The financial support of the National Science Council is deeply appreciated.

PY - 1981/10

Y1 - 1981/10

N2 - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

AB - A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr.

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DO - 10.1016/0022-0248(81)90266-9

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AN - SCOPUS:49049152584

SN - 0022-0248

VL - 55

SP - 24

EP - 29

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

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