Characterization of fluorine-modified organosilicate glass

Chi Wen Liu, Ying Lang Wang, Yungder Juang, Shiuh Ko Jangjean, Wen-Shi Lee

Research output: Contribution to journalArticle

Abstract

In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS O2 Si F4 mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.

Original languageEnglish
Article number015606JVA
Pages (from-to)2076-2081
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number6
DOIs
Publication statusPublished - 2006 Nov 17

Fingerprint

Fluorine
fluorine
Glass
glass
Electric breakdown
leakage
reflectometers
Reflectometers
Fourier transformation
Plasma enhanced chemical vapor deposition
Photoelectron spectroscopy
Deposition rates
electrical faults
Leakage currents
x ray spectroscopy
Infrared spectroscopy
Desorption
Activation energy
breakdown
desorption

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Liu, Chi Wen ; Wang, Ying Lang ; Juang, Yungder ; Jangjean, Shiuh Ko ; Lee, Wen-Shi. / Characterization of fluorine-modified organosilicate glass. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2006 ; Vol. 24, No. 6. pp. 2076-2081.
@article{fde264648f4541d684077cb45b1369d5,
title = "Characterization of fluorine-modified organosilicate glass",
abstract = "In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS O2 Si F4 mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.",
author = "Liu, {Chi Wen} and Wang, {Ying Lang} and Yungder Juang and Jangjean, {Shiuh Ko} and Wen-Shi Lee",
year = "2006",
month = "11",
day = "17",
doi = "10.1116/1.2348644",
language = "English",
volume = "24",
pages = "2076--2081",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "6",

}

Characterization of fluorine-modified organosilicate glass. / Liu, Chi Wen; Wang, Ying Lang; Juang, Yungder; Jangjean, Shiuh Ko; Lee, Wen-Shi.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 6, 015606JVA, 17.11.2006, p. 2076-2081.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of fluorine-modified organosilicate glass

AU - Liu, Chi Wen

AU - Wang, Ying Lang

AU - Juang, Yungder

AU - Jangjean, Shiuh Ko

AU - Lee, Wen-Shi

PY - 2006/11/17

Y1 - 2006/11/17

N2 - In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS O2 Si F4 mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.

AB - In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS O2 Si F4 mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.

UR - http://www.scopus.com/inward/record.url?scp=33750961412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750961412&partnerID=8YFLogxK

U2 - 10.1116/1.2348644

DO - 10.1116/1.2348644

M3 - Article

VL - 24

SP - 2076

EP - 2081

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

M1 - 015606JVA

ER -