Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

Ching Ting Lee, Chi Yu Wang, Yeong Chang Chou

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

For a GaAs/InP strained structure grown by MBE, the influence of the thickness of the GaAs strained buffer layer on crystal quality was investigated and demonstrated. An X-ray diffractometer was used to measure the grown epitaxial layers. From experimental results, it was found that a thickness of strained layer was required to compensate the effect of misfit dislocation due to the lattice mismatch between GaAs and the InP substrate. The required thickness was deduced to be about 2 μm.

Original languageEnglish
Pages (from-to)107-110
Number of pages4
JournalThin Solid Films
Volume286
Issue number1-2
DOIs
Publication statusPublished - 1996 Sept 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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