Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee; J. K. Sheu; W. C. Lai; Y. K. Su; S. J. Chang; C. J. Kao; C. J. Tun; M. G. Chen; W. H. Chang; G. C. Chi; J. M. Tsai

doi:10.1063/1.1587890

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi, J. M. Tsai

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Abstract

A report on the characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer was presented in the article. It was found that the leakage currents can be reduced and a much larger photocurrent to dark contrast ratio can be achieved by introducing a low temperature GaN on top of the conventional nitride-based ultraviolet photodiodes. It was also found that the operation speed of sample A is slower than that of sample B due to the highly resistive low temperature GaN layer induced large RC time constant.

Original language	English
Pages (from-to)	1753-1757
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	3
DOIs	https://doi.org/10.1063/1.1587890
Publication status	Published - 2003 Aug 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1587890

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title = "Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer",

abstract = "A report on the characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer was presented in the article. It was found that the leakage currents can be reduced and a much larger photocurrent to dark contrast ratio can be achieved by introducing a low temperature GaN on top of the conventional nitride-based ultraviolet photodiodes. It was also found that the operation speed of sample A is slower than that of sample B due to the highly resistive low temperature GaN layer induced large RC time constant.",

author = "Lee, {M. L.} and Sheu, {J. K.} and Lai, {W. C.} and Su, {Y. K.} and Chang, {S. J.} and Kao, {C. J.} and Tun, {C. J.} and Chen, {M. G.} and Chang, {W. H.} and Chi, {G. C.} and Tsai, {J. M.}",

year = "2003",

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T1 - Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Kao, C. J.

AU - Tun, C. J.

AU - Chen, M. G.

AU - Chang, W. H.

AU - Chi, G. C.

AU - Tsai, J. M.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - A report on the characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer was presented in the article. It was found that the leakage currents can be reduced and a much larger photocurrent to dark contrast ratio can be achieved by introducing a low temperature GaN on top of the conventional nitride-based ultraviolet photodiodes. It was also found that the operation speed of sample A is slower than that of sample B due to the highly resistive low temperature GaN layer induced large RC time constant.

AB - A report on the characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer was presented in the article. It was found that the leakage currents can be reduced and a much larger photocurrent to dark contrast ratio can be achieved by introducing a low temperature GaN on top of the conventional nitride-based ultraviolet photodiodes. It was also found that the operation speed of sample A is slower than that of sample B due to the highly resistive low temperature GaN layer induced large RC time constant.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

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