Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, G. C. Chi

Research output: Contribution to conferencePaperpeer-review

Abstract

By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.

Original languageEnglish
Pages260-269
Number of pages10
Publication statusPublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04-10-0304-10-08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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