Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

M. L. Lee; J. K. Sheu; Y. K. Su; S. J. Chang; W. C. Lai; G. C. Chi

Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, G. C. Chi

Research output: Contribution to conference › Paper › peer-review

Abstract

By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.

Original language	English
Pages	260-269
Number of pages	10
Publication status	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Other

Other	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	04-10-03 → 04-10-08

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Lee, M. L., Sheu, J. K., Su, Y. K., Chang, S. J., Lai, W. C., & Chi, G. C. (2004). Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer. 260-269. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Lee, M. L. ; Sheu, J. K. ; Su, Y. K. et al. / Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.10 p.

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title = "Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer",

abstract = "By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.",

author = "Lee, {M. L.} and Sheu, {J. K.} and Su, {Y. K.} and Chang, {S. J.} and Lai, {W. C.} and Chi, {G. C.}",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

year = "2004",

language = "English",

pages = "260--269",

}

Lee, ML, Sheu, JK, Su, YK, Chang, SJ , Lai, WC & Chi, GC 2004, 'Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04-10-03 - 04-10-08 pp. 260-269.

Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer. / Lee, M. L.; Sheu, J. K.; Su, Y. K. et al.
2004. 260-269 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lai, W. C.

AU - Chi, G. C.

PY - 2004

Y1 - 2004

N2 - By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.

AB - By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.

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UR - http://www.scopus.com/inward/citedby.url?scp=17044388241&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044388241

SP - 260

EP - 269

T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

ER -

Lee ML, Sheu JK, Su YK, Chang SJ , Lai WC, Chi GC. Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

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