By using organometallic vapor phase epitaxy (OMVPE), we have prepared i-GaN/low-temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With incident light wavelength of 350 nm and a -1 V reverse bias, it was found that the measured responsivity was around 0.1 A/W and 0.37 A/W for sample A and sample B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT-GaN layer induced large RC time constant.
|Number of pages||10|
|Publication status||Published - 2004|
|Event||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|Period||04-10-03 → 04-10-08|
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