Characterization of Hf 1-xZr xO 2 gate dielectrics with 0 ≤ x ≤ 1 prepared by atomic layer deposition for metal oxide semiconductor field effect transistor applications

Chen Kuo Chiang, Chien Hung Wu, Chin Chien Liu, Jin Fu Lin, Chien Lun Yang, Jiun Yuan Wu, Shui Jinn Wang

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10 Citations (Scopus)

Abstract

In this work, we investigated the influence of incorporating zirconia (ZrO 2) in HfO 2 gate dielectric on the electrical properties and reliability of n-channel metal oxide semiconductor field effect transistors (nMOSFETs). Detailed film physical, chemical and optical properties of Hf 1-xZr xO 2 as a function of Zr content were studied using high resolution transmission electron microscopy (HR-TEM), angle resolved X-ray photoelectron spectroscopy (AR-XPS), and spectroscopic ellipsometer (SE). Compared to HfO 2, Hf 1-xZr xO 2 provides not only higher k values for further equivalent oxide thickness (EOT) scaling but also lower capacitance-voltage (C-V) hysteresis, lower threshold voltage (V t) shift (δ V t), and higher time-to-failure (TTF) lifetimes. Improved TTF lifetime of as high as three orders of magnitude and 35% lower Vt shift were achieved from the Hf 1-xZr xO 2 gate stack with x = 0:8. The improved reliability of the Hf 1-xZr xO 2 gate dielectric is attributed to the reduced charge trapping in the Hf 1-xZr xO 2 gate dielectric caused by the ZrO 2 incorporation.

Original languageEnglish
Article number011101
JournalJapanese journal of applied physics
Volume51
Issue number1
DOIs
Publication statusPublished - 2012 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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