InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum well blue-light-emitting diode (LED) structures grown by metal organic chemical vapor deposition (MOCVD) were studied for their structural properties, surface morphology and temperature dependent photoluminescence. High resolution transmission electron microscopy (HRTEM) was used to observe the quantum-dot like structures and strain contrast evident by black lumps, in the quantum wells. Kinematical theory method was used to simulate double-crystal high-resolution x-ray diffraction (HRXRD) spectra of blue LED. The S shape character shift red-blue-redshift of the quantum well emission line is observed with temperature variation in the photoluminescence (PL).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)