Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu, I. G. Chen

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum well blue-light-emitting diode (LED) structures grown by metal organic chemical vapor deposition (MOCVD) were studied for their structural properties, surface morphology and temperature dependent photoluminescence. High resolution transmission electron microscopy (HRTEM) was used to observe the quantum-dot like structures and strain contrast evident by black lumps, in the quantum wells. Kinematical theory method was used to simulate double-crystal high-resolution x-ray diffraction (HRXRD) spectra of blue LED. The S shape character shift red-blue-redshift of the quantum well emission line is observed with temperature variation in the photoluminescence (PL).

Original languageEnglish
Pages (from-to)3307-3309
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
Publication statusPublished - 2004 Apr 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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