Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

Wen Huei Chiou, Hsi Jen Pan, Rong Chau Liu, Chun Yuan Chen, Chih Kai Wang, Hung Ming Chuang, Wen-Chau Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We study and demonstrate the dc performance of two InP/InGaAs double-heterojunction bipolar transistor (DHBTs) with the undoped tunnelling barrier and composite collector structures. Due to the mass filtering effect for holes, a thin InP tunnelling barrier can be used to replace the wide-gap emitter. By varying the thickness of the barrier, distinct collector current ideality factors can be obtained which reveal different injection mechanisms at the emitter. The 4000 Å InP collectors with InP/InGaAs abrupt junctions and InP/InGaAsP/InGaAs step-graded junctions achieve high breakdown voltages of 9.2 and 14.6 V, respectively. Furthermore, the abrupt junction and δ-doping structure eliminate carrier blocking across the base-collector heterojunction more effectively than the step-graded junction. We find that the reduction of the multiplication avalanche of the step-graded junction DHBT leads to the severe self-heating effect. For the abrupt junction DHBT, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.

Original languageEnglish
Pages (from-to)87-92
Number of pages6
JournalSemiconductor Science and Technology
Volume17
Issue number1
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
accumulators
heterojunctions
composite materials
Composite materials
emitters
Electric breakdown
Heterojunctions
Doping (additives)
Heating
electrical faults
multiplication
avalanches
injection
heating

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chiou, Wen Huei ; Pan, Hsi Jen ; Liu, Rong Chau ; Chen, Chun Yuan ; Wang, Chih Kai ; Chuang, Hung Ming ; Liu, Wen-Chau. / Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures. In: Semiconductor Science and Technology. 2002 ; Vol. 17, No. 1. pp. 87-92.
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Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures. / Chiou, Wen Huei; Pan, Hsi Jen; Liu, Rong Chau; Chen, Chun Yuan; Wang, Chih Kai; Chuang, Hung Ming; Liu, Wen-Chau.

In: Semiconductor Science and Technology, Vol. 17, No. 1, 01.01.2002, p. 87-92.

Research output: Contribution to journalArticle

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AU - Pan, Hsi Jen

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AU - Wang, Chih Kai

AU - Chuang, Hung Ming

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