Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Yung-Yu Chen, T. H. Li, K. T. Kin, C. H. Chien, J. C. Lou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

Original languageEnglish
Title of host publicationNanoSingapore 2006
Subtitle of host publicationIEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages463-466
Number of pages4
DOIs
Publication statusPublished - 2006 Nov 14
Event2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
Duration: 2006 Jan 102006 Jan 13

Publication series

NameNanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume2006

Other

Other2006 IEEE Conference on Emerging Technologies - Nanoelectronics
CountrySingapore
CitySingapore
Period06-01-1006-01-13

Fingerprint

Flash memory
Metallorganic chemical vapor deposition
Leakage currents
Reactive sputtering
Electric breakdown
Permittivity
Current density

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, Y-Y., Li, T. H., Kin, K. T., Chien, C. H., & Lou, J. C. (2006). Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (pp. 463-466). [1609772] (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006). https://doi.org/10.1109/NANOEL.2006.1609772
Chen, Yung-Yu ; Li, T. H. ; Kin, K. T. ; Chien, C. H. ; Lou, J. C. / Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. pp. 463-466 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings).
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Chen, Y-Y, Li, TH, Kin, KT, Chien, CH & Lou, JC 2006, Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. in NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609772, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, vol. 2006, pp. 463-466, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 06-01-10. https://doi.org/10.1109/NANOEL.2006.1609772

Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. / Chen, Yung-Yu; Li, T. H.; Kin, K. T.; Chien, C. H.; Lou, J. C.

NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466 1609772 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

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Chen Y-Y, Li TH, Kin KT, Chien CH, Lou JC. Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466. 1609772. (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings). https://doi.org/10.1109/NANOEL.2006.1609772