Characterization of oxide tarps in 28nm p-type metal-oxide-semiconductor field-effect transistors with tip-shaped SiGe source/drain based on random telegraph noise

Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Osbert Cheng

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

In this study, the impact of embedded tip-shaped SiGe in the source/drain (S/D) region on individual trap behavior such as activation energy and depth from the SiO 2/Si interface of the 28nm p-type metal-oxide- semiconductor field-effect transistors (pMOSFETs) has been investigated on the basis of drain current random telegraph noise (RTN). The purpose of implementing tip-shaped SiGe S/D is to further increase channel stress because it provides a closer proximity of embedded SiGe to the channel. By characterizing RTN, we found that the pMOSFETs underwent uniaxial compressive strain that was provided by tip-shaped SiGe S/D, and the trap energy level being close to the channel valence band resulted in the trap located close to the Si/SiO 2 interface, as compared with the control device without embedded SiGe S/D.

Original languageEnglish
Article number02BC11
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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