Characterization of Pd-GaAs Schottky diodes prepared by the electroless plating technique

Huey-Ing Chen, Chien Kang Hsiung, Yen I. Chou

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this work, Pd-GaAs Schottky diodes have been fabricated by a novel electroless plating technique. A scanning electron microscope (SEM) and Raman spectra are used to characterize the surface morphology of Pd film and Pd-GaAs interface, respectively. Effects of plating variables including concentrations of PdCl 2, N 2H 4 and bulk plating bath, as well as the plating time, on the Pd surface morphology and current-voltage (I-V) characteristics are investigated. From experimental results, it is revealed that I-V characteristics of Pd-GaAs diodes are strongly influenced by the Pd grain size. The Schottky barrier height is increased with decreasing Pd grain size and particle size distribution by lowering the plating temperature and concentrations of PdCl 2, N 2H 4 and bulk plating bath. Moreover, in the presence of sodium, I-V characteristics of the studied diodes are obviously inferior. Based on these results, the high performance Pd-GaAs Schottky diodes can be obtained by appropriately manipulating the plating conditions.

Original languageEnglish
Pages (from-to)620-626
Number of pages7
JournalSemiconductor Science and Technology
Volume18
Issue number7
DOIs
Publication statusPublished - 2003 Jul 1

Fingerprint

Electroless plating
Schottky diodes
plating
Plating
Diodes
Surface morphology
baths
grain size
diodes
Particle size analysis
gallium arsenide
Raman scattering
particle size distribution
Electron microscopes
Sodium
Scanning
electron microscopes
sodium
Raman spectra
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "In this work, Pd-GaAs Schottky diodes have been fabricated by a novel electroless plating technique. A scanning electron microscope (SEM) and Raman spectra are used to characterize the surface morphology of Pd film and Pd-GaAs interface, respectively. Effects of plating variables including concentrations of PdCl 2, N 2H 4 and bulk plating bath, as well as the plating time, on the Pd surface morphology and current-voltage (I-V) characteristics are investigated. From experimental results, it is revealed that I-V characteristics of Pd-GaAs diodes are strongly influenced by the Pd grain size. The Schottky barrier height is increased with decreasing Pd grain size and particle size distribution by lowering the plating temperature and concentrations of PdCl 2, N 2H 4 and bulk plating bath. Moreover, in the presence of sodium, I-V characteristics of the studied diodes are obviously inferior. Based on these results, the high performance Pd-GaAs Schottky diodes can be obtained by appropriately manipulating the plating conditions.",
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Characterization of Pd-GaAs Schottky diodes prepared by the electroless plating technique. / Chen, Huey-Ing; Hsiung, Chien Kang; Chou, Yen I.

In: Semiconductor Science and Technology, Vol. 18, No. 7, 01.07.2003, p. 620-626.

Research output: Contribution to journalArticle

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