Characterization of reactively sputtered c-axis orientation (Al, B)N films on diamond

Jen Hao Song, Sheng Chang Wang, James C. Sung, Jow-Lay Huang, Ding Fwu Lii

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this research, we demonstrated the viability of oriented AlN layer that incorporated BN to enhance the texturing. Wurtzite (Al, B)N films were deposited on a diamond wafer (diamond film on Si wafer) by a co-sputtering technique. The preferred orientation structure is sensitive to sputtering control factors. The relationship between the microstructures and process conditions were examined with XRD, TEM and AFM analysis. The cross-section TEM images showed that amorphous and randomly aligned structures were produced in the initial sputtering period, but the higher c-axis orientation structure formed as the sputtering time increased. The thickness of the amorphous and randomly aligned layer decreased with increasing sputtering power, nitrogen concentration, substrate temperature and bias voltage. As the thickness of the amorphous and the randomly aligned layer decreased, an (Al,B)N film with higher film quality than AlN was observed.

Original languageEnglish
Pages (from-to)4753-4757
Number of pages5
JournalThin Solid Films
Volume517
Issue number17
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Diamond
Sputtering
Diamonds
sputtering
diamonds
wafers
Transmission electron microscopy
transmission electron microscopy
Texturing
Diamond films
Bias voltage
diamond films
viability
wurtzite
Nitrogen
atomic force microscopy
nitrogen
microstructure
Microstructure
cross sections

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Song, Jen Hao ; Wang, Sheng Chang ; Sung, James C. ; Huang, Jow-Lay ; Lii, Ding Fwu. / Characterization of reactively sputtered c-axis orientation (Al, B)N films on diamond. In: Thin Solid Films. 2009 ; Vol. 517, No. 17. pp. 4753-4757.
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Characterization of reactively sputtered c-axis orientation (Al, B)N films on diamond. / Song, Jen Hao; Wang, Sheng Chang; Sung, James C.; Huang, Jow-Lay; Lii, Ding Fwu.

In: Thin Solid Films, Vol. 517, No. 17, 01.07.2009, p. 4753-4757.

Research output: Contribution to journalArticle

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AB - In this research, we demonstrated the viability of oriented AlN layer that incorporated BN to enhance the texturing. Wurtzite (Al, B)N films were deposited on a diamond wafer (diamond film on Si wafer) by a co-sputtering technique. The preferred orientation structure is sensitive to sputtering control factors. The relationship between the microstructures and process conditions were examined with XRD, TEM and AFM analysis. The cross-section TEM images showed that amorphous and randomly aligned structures were produced in the initial sputtering period, but the higher c-axis orientation structure formed as the sputtering time increased. The thickness of the amorphous and randomly aligned layer decreased with increasing sputtering power, nitrogen concentration, substrate temperature and bias voltage. As the thickness of the amorphous and the randomly aligned layer decreased, an (Al,B)N film with higher film quality than AlN was observed.

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