Characterization of Si implants in p-type GaN

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, G. C. Chi

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050 °C, 60 s RTA. By varying implantation and postimplantation annealing conditions, we could convert carrier concentration from p-type 3 × 1017 cm-3 into n-type 2 × 1017 cm-3 ∼2 × 1019 cm-3. It was found that typical activation energies of Si implants in p-GaN are lower than 10 meV. Such activation energies are smaller than those observed from epitaxially grown Si-doped GaN films. A deep donor level with activation energy of 60 meV was also found from some samples. Photoluminescence studies show that the peak appears at 372 nm might be related to implantation-induced defects. It was also found that a green emission band could be observed from Si-implanted GaN. It was shown that such a green emission is related to the yellow band observed from epitaxially grown Si-doped GaN. The transport properties of these Si-implanted samples were also studied.

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number4
Publication statusPublished - 2002 Jul

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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