Cu 2ZnSnSe 4 (CZTSe), a chalcopyrite-like semiconductor, which has high optical absorption and p-type electrical conductivity, provide a low-cost mass production solution with abundant and cheap materials, Zn and Sn. In previous researches, CZTSe was produced from co-evaporated or sputtered precursors. In this study, electrodeposition, a non-vacuum and low-cost process, was used to grow CZTSe films. The films were grown by one-step cathodic electrodeposition in single electrolyte bath, which contained CuCl 2, ZnCl 2, SnCl 2, and were deposited onto Mo coated glass substrates at room temperature. The CZTSe thin films have been obtained after annealing the as-deposited thin CZT films with powder of Se. The reduction potentials of each element in the electrolyte were determined by linear scan voltammetry (LSV) method. The film properties were characterized by field-emission scanning electron microscopy (FE-SEM) and EDS.