Abstract
High-density plasma chemical vapor deposited fluorosilicate glass (FSG) has been successfully used for the inter-metal dielectric material in ultra-large semiconductor integration manufacturing due to its low-dielectric constant and stable gap-filling capability. However, temperatures rise and related effects due to sputter etch from the deposition process have become major concerns for film properties. In this paper, an independent helium-cooling system was employed to control a suitable temperature range from 410 °C to 460 °C during FSG deposition. Subsequently, film properties including fluorine concentration, distribution, refractive index, dielectric constant and gap-filling capability were thus examined as a function of He pressure used in the cooling system. The results show that both deposition rate and fluorine concentration increase with increasing helium pressure; however, more fluorine becomes inactive, which might be present as defects. We have shown that an FSG film with a dielectric constant down to 3.43 as well as good gap-filling capability can be achieved when employing this new cooling system with 9 mTorr helium pressure.
Original language | English |
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Pages (from-to) | 20-24 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 498 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2006 Mar 1 |
Event | Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry