Characterization of sputter-induced temperature effect in fluorine doped SiO2 film deposition by high-density plasma chemical vapor deposition

Wen Chu Hsiao, Chuan Pu Liu, Ying Lang Wang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

High-density plasma chemical vapor deposited fluorosilicate glass (FSG) has been successfully used for the inter-metal dielectric material in ultra-large semiconductor integration manufacturing due to its low-dielectric constant and stable gap-filling capability. However, temperatures rise and related effects due to sputter etch from the deposition process have become major concerns for film properties. In this paper, an independent helium-cooling system was employed to control a suitable temperature range from 410 °C to 460 °C during FSG deposition. Subsequently, film properties including fluorine concentration, distribution, refractive index, dielectric constant and gap-filling capability were thus examined as a function of He pressure used in the cooling system. The results show that both deposition rate and fluorine concentration increase with increasing helium pressure; however, more fluorine becomes inactive, which might be present as defects. We have shown that an FSG film with a dielectric constant down to 3.43 as well as good gap-filling capability can be achieved when employing this new cooling system with 9 mTorr helium pressure.

Original languageEnglish
Pages (from-to)20-24
Number of pages5
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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