Characterization of sputtered nano-crystalline zirconiur carbide as a diffusion barrier for Cu metallization

Cheng Shi Chen, Chuan-Pu Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Zirconium carbide (ZrC) films were grown on Si (100) substrates using magnetron sputtering where the growth temperature (Tss) was varied from 25°C to 290°C. The microstructure and resistivity of the as-deposited ZrC films were examined. The results reveal that nano-crystalline ZrC films with grain size less than 5 nm were fabricated only at 29°C, which can be explained by a repeated nucleation mechanism. For thermal stability characterization, the stacked structure of Cu/ZrC/Si was subsequently subject to thermal treatments at temperatures from 300°C to 900°C for 30 min in a vacuum tube. The stacked samples were shown to be thermally stable up to about 800°C from Auger electron spectroscopy (AES) and x-ray diffraction (XRD). The diffusion coefficient and activation energy of Cu and Si in the ZrC barrier were also derived. It indicated that Si has a lower activation energy than Cu resulting in faster diffusion. The device completely fails at 900°C, and the mechanism is discussed in this paper.

Original languageEnglish
Pages (from-to)1408-1413
Number of pages6
JournalJournal of Electronic Materials
Volume34
Issue number11
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

zirconium carbides
Diffusion barriers
Metallizing
Zirconium
carbides
Carbides
Crystalline materials
Activation energy
activation energy
vacuum tubes
Electron tubes
Growth temperature
Auger electron spectroscopy
Magnetron sputtering
Auger spectroscopy
electron spectroscopy
magnetron sputtering
x ray diffraction
Thermodynamic stability
Nucleation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "Zirconium carbide (ZrC) films were grown on Si (100) substrates using magnetron sputtering where the growth temperature (Tss) was varied from 25°C to 290°C. The microstructure and resistivity of the as-deposited ZrC films were examined. The results reveal that nano-crystalline ZrC films with grain size less than 5 nm were fabricated only at 29°C, which can be explained by a repeated nucleation mechanism. For thermal stability characterization, the stacked structure of Cu/ZrC/Si was subsequently subject to thermal treatments at temperatures from 300°C to 900°C for 30 min in a vacuum tube. The stacked samples were shown to be thermally stable up to about 800°C from Auger electron spectroscopy (AES) and x-ray diffraction (XRD). The diffusion coefficient and activation energy of Cu and Si in the ZrC barrier were also derived. It indicated that Si has a lower activation energy than Cu resulting in faster diffusion. The device completely fails at 900°C, and the mechanism is discussed in this paper.",
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Characterization of sputtered nano-crystalline zirconiur carbide as a diffusion barrier for Cu metallization. / Chen, Cheng Shi; Liu, Chuan-Pu.

In: Journal of Electronic Materials, Vol. 34, No. 11, 01.01.2005, p. 1408-1413.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Chen, Cheng Shi

AU - Liu, Chuan-Pu

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AB - Zirconium carbide (ZrC) films were grown on Si (100) substrates using magnetron sputtering where the growth temperature (Tss) was varied from 25°C to 290°C. The microstructure and resistivity of the as-deposited ZrC films were examined. The results reveal that nano-crystalline ZrC films with grain size less than 5 nm were fabricated only at 29°C, which can be explained by a repeated nucleation mechanism. For thermal stability characterization, the stacked structure of Cu/ZrC/Si was subsequently subject to thermal treatments at temperatures from 300°C to 900°C for 30 min in a vacuum tube. The stacked samples were shown to be thermally stable up to about 800°C from Auger electron spectroscopy (AES) and x-ray diffraction (XRD). The diffusion coefficient and activation energy of Cu and Si in the ZrC barrier were also derived. It indicated that Si has a lower activation energy than Cu resulting in faster diffusion. The device completely fails at 900°C, and the mechanism is discussed in this paper.

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