Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Shui Jinn Wang; Hao Yi Tsai; S. C. Sun; M. H. Shiao

doi:10.1007/BF02657711

Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Shui Jinn Wang, Hao Yi Tsai, S. C. Sun, M. H. Shiao

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50:50 wt.% TaC target and an optimum N₂/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.

Original language	English
Article number	BF02657711
Pages (from-to)	917-924
Number of pages	8
Journal	Journal of Electronic Materials
Volume	30
Issue number	8
DOIs	https://doi.org/10.1007/BF02657711
Publication status	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02657711

Cite this

@article{8f11f6db0e1244c4a1a8e321b18b1659,

title = "Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system",

abstract = "Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50:50 wt.% TaC target and an optimum N2/Ar flow rate (in sccm) ratio of 2/24, a 600 {\AA}-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.",

author = "Wang, {Shui Jinn} and Tsai, {Hao Yi} and Sun, {S. C.} and Shiao, {M. H.}",

note = "Funding Information: This work was supported in part by the National Science Council (NSC) of Taiwan, ROC, under Contract No. NSC 88-2215-E-006-014.",

year = "2001",

doi = "10.1007/BF02657711",

language = "English",

volume = "30",

pages = "917--924",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

AU - Wang, Shui Jinn

AU - Tsai, Hao Yi

AU - Sun, S. C.

AU - Shiao, M. H.

N1 - Funding Information: This work was supported in part by the National Science Council (NSC) of Taiwan, ROC, under Contract No. NSC 88-2215-E-006-014.

PY - 2001

Y1 - 2001

N2 - Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50:50 wt.% TaC target and an optimum N2/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.

AB - Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50:50 wt.% TaC target and an optimum N2/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.

UR - http://www.scopus.com/inward/record.url?scp=0035415642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035415642&partnerID=8YFLogxK

U2 - 10.1007/BF02657711

DO - 10.1007/BF02657711

M3 - Article

AN - SCOPUS:0035415642

SN - 0361-5235

VL - 30

SP - 917

EP - 924

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

M1 - BF02657711

ER -

Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Abstract

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