Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Shui Jinn Wang, Hao Yi Tsai, S. C. Sun, M. H. Shiao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50:50 wt.% TaC target and an optimum N2/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.

Original languageEnglish
Article numberBF02657711
Pages (from-to)917-924
Number of pages8
JournalJournal of Electronic Materials
Volume30
Issue number8
DOIs
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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