Characterization of tantalum pentoxide dielectric films grown by low-pressure and plasma-enhanced chemical vapor deposition

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Abstract

The material properties as well as the electrical behavior of tantalum pentoxide (Ta2O5) thin films prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD), in the same reactor, were studied. Ta2O5 films were grown on Si and Pt substrates by reacting pentaethoxy tantalum [Ta(OC2H5)5] with oxygen and were annealed in an oxygen furnace at 700°C or oxygen plasma at 350°C. Scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), capacitance-voltage (C-V) and current-voltage (I-V) measurements were employed to characterize the Ta2O5 films before and after annealing. Compared to the LPCVD Ta2O5 film, the PECVD Ta2O5 film deposited at an rf power of 80 W exhibited a denser structure and better dielectric characteristics. Oxygen plasma annealing further d ensified the Ta2O5 films and improved their electrical performance on either Si or Pt substrate, without deteriorating the substrate materials.

Original languageEnglish
Pages (from-to)4593-4598
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number7
DOIs
Publication statusPublished - 2001 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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