The material properties as well as the electrical behavior of tantalum pentoxide (Ta2O5) thin films prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD), in the same reactor, were studied. Ta2O5 films were grown on Si and Pt substrates by reacting pentaethoxy tantalum [Ta(OC2H5)5] with oxygen and were annealed in an oxygen furnace at 700°C or oxygen plasma at 350°C. Scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), capacitance-voltage (C-V) and current-voltage (I-V) measurements were employed to characterize the Ta2O5 films before and after annealing. Compared to the LPCVD Ta2O5 film, the PECVD Ta2O5 film deposited at an rf power of 80 W exhibited a denser structure and better dielectric characteristics. Oxygen plasma annealing further d ensified the Ta2O5 films and improved their electrical performance on either Si or Pt substrate, without deteriorating the substrate materials.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2001 Jul|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)