Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, J. Kwo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages249-253
Number of pages5
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997 Jan 1
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period97-09-0897-09-11

Fingerprint

Molecular beam epitaxy
Electronic properties
Oxide films
Electric fields
Capacitance measurement
Voltage measurement
Air
Heterojunctions
Spectroscopy
Oxides
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hwang, J. S., Chou, W. Y., Chang, G. S., Tyan, S. L., Hong, M., Mannaerts, J. P., & Kwo, J. (1997). Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 249-253). [711628] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711628
Hwang, J. S. ; Chou, W. Y. ; Chang, G. S. ; Tyan, S. L. ; Hong, M. ; Mannaerts, J. P. ; Kwo, J. / Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 249-253 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).
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abstract = "We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.",
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Hwang, JS, Chou, WY, Chang, GS, Tyan, SL, Hong, M, Mannaerts, JP & Kwo, J 1997, Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711628, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 249-253, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97-09-08. https://doi.org/10.1109/ISCS.1998.711628

Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. / Hwang, J. S.; Chou, W. Y.; Chang, G. S.; Tyan, S. L.; Hong, M.; Mannaerts, J. P.; Kwo, J.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 249-253 711628 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Hwang, J. S.

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AU - Chang, G. S.

AU - Tyan, S. L.

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AU - Mannaerts, J. P.

AU - Kwo, J.

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N2 - We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

AB - We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

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Hwang JS, Chou WY, Chang GS, Tyan SL, Hong M, Mannaerts JP et al. Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 249-253. 711628. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). https://doi.org/10.1109/ISCS.1998.711628