Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

J. S. Hwang; W. Y. Chou; G. S. Chang; S. L. Tyan; M. Hong; J. P. Mannaerts; J. Kwo

doi:10.1109/ISCS.1998.711628

Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, J. Kwo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al₂O-, Ga₂O_x-, and Ga₂O₃(Gd₂O₃)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al₂O₃-, and Ga₂O_x-GaAs samples, respectively, corresponding to the interfacial state density (D_it) of 2.4, 2.2, and 1.9×10¹¹ cm^-2 eV^-1, respectively. For the Ga₃O₃(Gd₂O₃)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, D_it is less than 1×10¹¹ cm^-2 eV^-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	249-253
Number of pages	5
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711628
Publication status	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sept 8 → 1997 Sept 11

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	97-09-08 → 97-09-11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.1998.711628

Cite this

Hwang, J. S., Chou, W. Y., Chang, G. S., Tyan, S. L., Hong, M., Mannaerts, J. P., & Kwo, J. (1997). Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 249-253). Article 711628 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711628

Hwang, J. S. ; Chou, W. Y. ; Chang, G. S. et al. / Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 249-253 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{04161d680bb84b1f9004e94007396c60,

title = "Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy",

abstract = "We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.",

author = "Hwang, {J. S.} and Chou, {W. Y.} and Chang, {G. S.} and Tyan, {S. L.} and M. Hong and Mannaerts, {J. P.} and J. Kwo",

note = "Funding Information: This work was supported by National Science council of the Republic of China under contract No NSC. 86-21 12-M-006-010 and NSC. 86-21 12-M-006-008. Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711628",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "249--253",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

address = "United States",

}

Hwang, JS, Chou, WY, Chang, GS, Tyan, SL, Hong, M, Mannaerts, JP & Kwo, J 1997, Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711628, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 249-253, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97-09-08. https://doi.org/10.1109/ISCS.1998.711628

Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. / Hwang, J. S.; Chou, W. Y.; Chang, G. S. et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 249-253 711628 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

AU - Hwang, J. S.

AU - Chou, W. Y.

AU - Chang, G. S.

AU - Tyan, S. L.

AU - Hong, M.

AU - Mannaerts, J. P.

AU - Kwo, J.

N1 - Funding Information: This work was supported by National Science council of the Republic of China under contract No NSC. 86-21 12-M-006-010 and NSC. 86-21 12-M-006-008. Publisher Copyright: © 1998 IEEE.

PY - 1997

Y1 - 1997

N2 - We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

AB - We have used room temperature photoreflectance spectroscopy to study interfacial electronic properties of various oxide-GaAs heterostructures. The samples, air-, Al2O-, Ga2Ox-, and Ga2O3(Gd2O3)-GaAs, were fabricated by in-situ molecular beam epitaxy. Built-in electric fields are 48, 44, and 35 kV/cm for air-, Al2O3-, and Ga2Ox-GaAs samples, respectively, corresponding to the interfacial state density (Dit) of 2.4, 2.2, and 1.9×1011 cm-2 eV-1, respectively. For the Ga3O3(Gd2O3)-GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial stare density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm-2 eV-1. Our results are consistent with the previous data obtained using capacitance-voltage measurements in quasi-static/high frequency modes.

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U2 - 10.1109/ISCS.1998.711628

DO - 10.1109/ISCS.1998.711628

M3 - Conference contribution

AN - SCOPUS:85053160020

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 249

EP - 253

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -

Hwang JS, Chou WY, Chang GS, Tyan SL, Hong M, Mannaerts JP et al. Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 249-253. 711628. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711628

Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

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