Characterization of the Thermal Reactions for Cu/Thermal SiO 2 and Cu/Hydrogen Silsesquioxane on Silicon

J. S. Jeng, Jen-Sue Chen

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11 Citations (Scopus)


Thermal reactions of sputtered Cu films on the thermally grown silicon dioxide (SiO 2) and spin-on hydrogen silsesquioxane (HSQ) layers are investigated by examining the sheet resistance, surface microstructure, phase formation, and compositional depth profiles of Cu/thermal SiO 2 and Cu/HSQ structures on Si wafers after annealing in vacuum at 400-700°C. The sheet resistance values of both samples decreased after annealing at 400°C. The decrease in sheet resistance occurred in conjunction with growth of Cu grains and annihilation of microcracks of the as-deposited Cu films. Cu 2O was first found in the Cu/HSQ/〈Si〉 samples after annealing at 600°C, After annealing at 700°C, the whole copper layer of Cu/HSQ/〈Si〉 sample reacted with oxygen to form several copper oxides. On the contrary, only a minor part of copper in Cu/thermal SiOn/〈Si〉 structure was transformed to Cu 2O after annealing at 700°C. The reaction and/or diffusion characteristics of the two structures upon vacuum annealing are discussed.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number4
Publication statusPublished - 2001 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry


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