TY - JOUR
T1 - Characterization of ultrathin doping layers in semiconductors
AU - Liu, C. P.
AU - Dunin-Borkowski, R. E.
AU - Boothroyd, C. B.
AU - Brown, P. D.
AU - Humphreys, C. J.
PY - 1997
Y1 - 1997
N2 - The compositional profile of a narrow layer of InAsxP1-x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.
AB - The compositional profile of a narrow layer of InAsxP1-x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.
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U2 - 10.1017/s1431927697970276
DO - 10.1017/s1431927697970276
M3 - Article
AN - SCOPUS:0031492119
SN - 1431-9276
VL - 3
SP - 352
EP - 363
JO - Microscopy and Microanalysis
JF - Microscopy and Microanalysis
IS - 4
ER -