Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

Shiou Jen Jian; Sheng Yuan Chu

doi:10.1080/10584580590897272

Characterization of ZnO thin film depositing on the 64° LiNbO ₃ substrate and its applications on liquid sensors

Research output: Contribution to journal › Conference article › peer-review

Abstract

Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO₃ substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO₃) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

Original language	English
Pages (from-to)	55-63
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	69
DOIs	https://doi.org/10.1080/10584580590897272
Publication status	Published - 2005
Event	16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of Duration: 2004 Apr 5 → 2004 Apr 8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors",

abstract = "Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.",

author = "Jian, {Shiou Jen} and Chu, {Sheng Yuan}",

year = "2005",

doi = "10.1080/10584580590897272",

language = "English",

volume = "69",

pages = "55--63",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "16th International Symposium on Integrated Ferroelectrics, ISIF-16 ; Conference date: 05-04-2004 Through 08-04-2004",

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T1 - Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

AU - Jian, Shiou Jen

AU - Chu, Sheng Yuan

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N2 - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

AB - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

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