Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

Shiou Jen Jian, Sheng-Yuan Chu

Research output: Contribution to journalConference article

Abstract

Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

Original languageEnglish
Pages (from-to)55-63
Number of pages9
JournalIntegrated Ferroelectrics
Volume69
DOIs
Publication statusPublished - 2005 Dec 1
Event16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of
Duration: 2004 Apr 52004 Apr 8

Fingerprint

Thin films
sensors
Sensors
Liquids
Substrates
liquids
thin films
Love waves
pressure chambers
Argon
Magnetron sputtering
gas flow
Flow of gases
Resonators
magnetron sputtering
resonators
argon
Oxygen
Crystalline materials
filters

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors",
abstract = "Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.",
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Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors. / Jian, Shiou Jen; Chu, Sheng-Yuan.

In: Integrated Ferroelectrics, Vol. 69, 01.12.2005, p. 55-63.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

AU - Jian, Shiou Jen

AU - Chu, Sheng-Yuan

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N2 - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

AB - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

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