Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

Shiou Jen Jian; Sheng Yuan Chu

doi:10.1080/10584580590897272

Characterization of ZnO thin film depositing on the 64° LiNbO ₃ substrate and its applications on liquid sensors

Research output: Contribution to journal › Conference article › peer-review

Abstract

Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO₃ substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO₃) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

Original language	English
Pages (from-to)	55-63
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	69
DOIs	https://doi.org/10.1080/10584580590897272
Publication status	Published - 2005
Event	16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of Duration: 2004 Apr 5 → 2004 Apr 8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580590897272

Cite this

@article{dd35daab1ec34bdbb8f14042ac22855c,

title = "Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors",

abstract = "Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.",

author = "Jian, {Shiou Jen} and Chu, {Sheng Yuan}",

year = "2005",

doi = "10.1080/10584580590897272",

language = "English",

volume = "69",

pages = "55--63",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "16th International Symposium on Integrated Ferroelectrics, ISIF-16 ; Conference date: 05-04-2004 Through 08-04-2004",

}

TY - JOUR

T1 - Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors

AU - Jian, Shiou Jen

AU - Chu, Sheng Yuan

PY - 2005

Y1 - 2005

N2 - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

AB - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644758208&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644758208&partnerID=8YFLogxK

U2 - 10.1080/10584580590897272

DO - 10.1080/10584580590897272

M3 - Conference article

AN - SCOPUS:33644758208

VL - 69

SP - 55

EP - 63

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

T2 - 16th International Symposium on Integrated Ferroelectrics, ISIF-16

Y2 - 5 April 2004 through 8 April 2004

ER -

Characterization of ZnO thin film depositing on the 64° LiNbO ₃ substrate and its applications on liquid sensors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this