Abstract
Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 55-63 |
| Number of pages | 9 |
| Journal | Integrated Ferroelectrics |
| Volume | 69 |
| DOIs | |
| Publication status | Published - 2005 Dec 1 |
| Event | 16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of Duration: 2004 Apr 5 → 2004 Apr 8 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors. / Jian, Shiou Jen; Chu, Sheng-Yuan.
In: Integrated Ferroelectrics, Vol. 69, 01.12.2005, p. 55-63.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Characterization of ZnO thin film depositing on the 64° LiNbO 3 substrate and its applications on liquid sensors
AU - Jian, Shiou Jen
AU - Chu, Sheng-Yuan
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.
AB - Poly-crysial ZnO films with c-axis (002) orientation have been successfully grown on the 64° LiNbO3 substrate by RF magnetron sputtering technique. The deposited films were characterized as a function of deposition temperature, argon-oxygen gas flow ratio and the chamber pressure. Crystalline structures of the films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. Highly (002) oriented films can be obtained. Love wave devices based on this structure (ZnO/IDTs/64° LiNbO3) were then presented. Preferred deposition condition was found to give good film quality for resonator filter and sensor applications, respectively.
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U2 - 10.1080/10584580590897272
DO - 10.1080/10584580590897272
M3 - Conference article
AN - SCOPUS:33644758208
VL - 69
SP - 55
EP - 63
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
SN - 1058-4587
ER -