Charge carrier dynamics and recombination in graded band gap CuIn 1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

Darius Kuciauskas; Jian V. Li; Miguel A. Contreras; Joel Pankow; Patricia Dippo; Matthew Young; Lorelle M. Mansfield; Rommel Noufi; Dean Levi

doi:10.1063/1.4825211

Charge carrier dynamics and recombination in graded band gap CuIn _1-xGa_xSe₂ polycrystalline thin-film photovoltaic solar cell absorbers

Darius Kuciauskas, Jian V. Li, Miguel A. Contreras, Joel Pankow, Patricia Dippo, Matthew Young, Lorelle M. Mansfield, Rommel Noufi, Dean Levi

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn_1-xGa_xSe ₂ (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm²V^-1 s^-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 10¹⁵-10¹⁷ cm ^-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

Original language	English
Article number	154505
Journal	Journal of Applied Physics
Volume	114
Issue number	15
DOIs	https://doi.org/10.1063/1.4825211
Publication status	Published - 2013 Oct 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.4825211

Fingerprint Dive into the research topics of 'Charge carrier dynamics and recombination in graded band gap CuIn 1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers'. Together they form a unique fingerprint.

Cite this

@article{9228c5d6a26f44fea0fafa3b120b6f74,

title = "Charge carrier dynamics and recombination in graded band gap CuIn 1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers",

abstract = "We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.",

author = "Darius Kuciauskas and Li, {Jian V.} and Contreras, {Miguel A.} and Joel Pankow and Patricia Dippo and Matthew Young and Mansfield, {Lorelle M.} and Rommel Noufi and Dean Levi",

note = "Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory.",

year = "2013",

month = oct,

day = "21",

doi = "10.1063/1.4825211",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

Charge carrier dynamics and recombination in graded band gap CuIn _1-xGa_xSe₂ polycrystalline thin-film photovoltaic solar cell absorbers. / Kuciauskas, Darius; Li, Jian V.; Contreras, Miguel A.; Pankow, Joel; Dippo, Patricia; Young, Matthew; Mansfield, Lorelle M.; Noufi, Rommel; Levi, Dean.

In: Journal of Applied Physics, Vol. 114, No. 15, 154505, 21.10.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Charge carrier dynamics and recombination in graded band gap CuIn 1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

AU - Kuciauskas, Darius

AU - Li, Jian V.

AU - Contreras, Miguel A.

AU - Pankow, Joel

AU - Dippo, Patricia

AU - Young, Matthew

AU - Mansfield, Lorelle M.

AU - Noufi, Rommel

AU - Levi, Dean

N1 - Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory.

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

AB - We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84886537520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886537520&partnerID=8YFLogxK

U2 - 10.1063/1.4825211

DO - 10.1063/1.4825211

M3 - Article

AN - SCOPUS:84886537520

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 15

M1 - 154505

ER -