Charge carrier dynamics and recombination in graded band gap CuIn 1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

Darius Kuciauskas, Jian V. Li, Miguel A. Contreras, Joel Pankow, Patricia Dippo, Matthew Young, Lorelle M. Mansfield, Rommel Noufi, Dean Levi

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27 Citations (Scopus)


We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

Original languageEnglish
Article number154505
JournalJournal of Applied Physics
Issue number15
Publication statusPublished - 2013 Oct 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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