TY - GEN
T1 - Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET
AU - Jiang, Mao Hong
AU - Wu, Chan Liang
AU - Huang, Chung Hsun
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs among switching speed, noise generation and reliability. Generally, a gate driver is composed of discrete components with occupying a large footprint, while possibly inducing parasitic side-effects and lowering power density. Thus, we demonstrate a gate driver integrated circuit with integrating a self-timing charge pump circuit on chip. Physical design considerations were also raised in this paper to eliminate the occurrence of Latch-up, IR drop, Electromigration, and ESD problems. A charge pump gate driver (CPGD) integrated circuit (IC) is designed, implemented and fabricated using TSMC 0. 1S μ m70V Technology, in which demonstrates a very small die footprint of 3 mm2 while achieving a significant improvement in switching transient speed over a conventional gate driver design.
AB - Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs among switching speed, noise generation and reliability. Generally, a gate driver is composed of discrete components with occupying a large footprint, while possibly inducing parasitic side-effects and lowering power density. Thus, we demonstrate a gate driver integrated circuit with integrating a self-timing charge pump circuit on chip. Physical design considerations were also raised in this paper to eliminate the occurrence of Latch-up, IR drop, Electromigration, and ESD problems. A charge pump gate driver (CPGD) integrated circuit (IC) is designed, implemented and fabricated using TSMC 0. 1S μ m70V Technology, in which demonstrates a very small die footprint of 3 mm2 while achieving a significant improvement in switching transient speed over a conventional gate driver design.
UR - https://www.scopus.com/pages/publications/85174248204
UR - https://www.scopus.com/pages/publications/85174248204#tab=citedBy
U2 - 10.1109/WiPDAAsia58218.2023.10261932
DO - 10.1109/WiPDAAsia58218.2023.10261932
M3 - Conference contribution
AN - SCOPUS:85174248204
T3 - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Y2 - 27 August 2023 through 29 August 2023
ER -