In this letter, electrical characteristics of TiO2 and nitrogen incorporated TiO2 (TiON) as the charge storage layer (CSL) in charge storage memories are investigated. Compared with the charge storage memory device with the TiO2 CSL, the one with the TiON CSL exhibits a wider flatband voltage hysteresis window (10 V at ±12 V), a higher program response (flat-band voltage shift = 1.842 V at 15 V/1 ms voltage pulse), and a minor charge loss (11.15% after 104 s at 25 °C). Furthermore, the energy levels of charge trapping sites in TiO2 and TiON CSLs, extracted from temperature-dependent retention measurement, are 0.185 and 0.391 eV, respectively. Microstructure and interface composition of TiO2 and TiON CSLs are examined to understand the distinct charge storage performances of two memory devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering