Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications

Po Cheng Tsai, Chun Wei Huang, Shoou Jinn Chang, Shu Wei Chang, Shih Yen Lin

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We epitaxially grew bilayer molybdenum disulfide (MoS2) on monolayer graphene by sulfurizing a molybdenum-trioxide film (MoO3) which was deposited with thermal evaporation. The Hall mobilities of graphene before and after the growth of MoS2are similar, indicating that the underlying 2D layer was little affected during the deposition and sulfurization. Through the atomic-layer etching, the topmost layer of MoS2is isolated from the source and drain electrodes. The top-gate transistor with the isolated monolayer MoS2on top of the graphene channel exhibits hysteresis of drain current as the gate voltage varies. This may be due to the weak tunneling through 2D layers bonded by the van der Waals force in the absence of an external electric field. The long retention time of the device features robust charge storage around the isolated MoS2layer. The one-transistor-zero-capacitor memory module based on this thin heterostructure of 2D materials can be advantageous for applications in dynamic random access memories with reduced thickness.

Original languageEnglish
Pages (from-to)45864-45869
Number of pages6
JournalACS Applied Materials and Interfaces
Volume13
Issue number38
DOIs
Publication statusPublished - 2021 Sept 29

All Science Journal Classification (ASJC) codes

  • General Materials Science

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