Chemical Etching of Sh1_xGexin HF:H202:CH3COOH

T. K. Cams, M. O. Tanner, K. L. Wang

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Abstract

The properties of a highly selective chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H202:CH3COOH) is investigated in etching SiGe/Si heterostructures. This solution has been found to etch Si1-rGer much faster than Si over the entire range of Ge contents. The etch rate dependences are presented as functions of solution composition, Ge content, dopant type, diluent type, temperature, and stirring. Both n-type and p-type Si1-rGer layers with Ge contents of 0 < x 0.60 and 0 s x 1.00, respectively, are investigated. It is found that the n-type samples etch at a faster rate than p-type for all Ge contents examined. When CH3COOH is used as the diluent instead of H20 a significant enhancement in the etch rate results for all concentrations of Ge studied. Also, the amount of H202 in the presence of CH3COOH has a significant effect on the magnitude of the etch rate as well as its behavior over time.

Original languageEnglish
Pages (from-to)1260-1266
Number of pages7
JournalJournal of the Electrochemical Society
Volume142
Issue number4
DOIs
Publication statusPublished - 1995 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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