Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

Yuchun Chen; Minjui Lo; Chihchun Chang; Pinyi Lee; Chenglung Chung; Yonhua Tzeng

doi:10.1109/NANO.2015.7388665

Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

Yuchun Chen, Minjui Lo, Chihchun Chang, Pinyi Lee, Chenglung Chung, Yonhua Tzeng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	556-559
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388665
Publication status	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15-07-27 → 15-07-30

All Science Journal Classification (ASJC) codes

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388665

Cite this

Chen, Y., Lo, M., Chang, C., Lee, P., Chung, C., & Tzeng, Y. (2015). Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 556-559). Article 7388665 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388665

@inproceedings{00dc4f4c5ef84b27b7db2bc02173361f,

title = "Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film",

abstract = "Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.",

author = "Yuchun Chen and Minjui Lo and Chihchun Chang and Pinyi Lee and Chenglung Chung and Yonhua Tzeng",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388665",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "556--559",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

address = "United States",

}

Chen, Y, Lo, M, Chang, C, Lee, P, Chung, C & Tzeng, Y 2015, Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388665, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 556-559, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15-07-27. https://doi.org/10.1109/NANO.2015.7388665

Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film. / Chen, Yuchun; Lo, Minjui; Chang, Chihchun et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 556-559 7388665 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

AU - Chen, Yuchun

AU - Lo, Minjui

AU - Chang, Chihchun

AU - Lee, Pinyi

AU - Chung, Chenglung

AU - Tzeng, Yonhua

PY - 2015

Y1 - 2015

N2 - Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.

AB - Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.

UR - http://www.scopus.com/inward/record.url?scp=84964397399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964397399&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388665

DO - 10.1109/NANO.2015.7388665

M3 - Conference contribution

AN - SCOPUS:84964397399

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 556

EP - 559

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Chen Y, Lo M, Chang C, Lee P, Chung C, Tzeng Y. Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 556-559. 7388665. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388665

Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this