Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

Yuchun Chen, Minjui Lo, Chihchun Chang, Pinyi Lee, Chenglung Chung, Yonhua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages556-559
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - 2015 Jan 1
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15-07-2715-07-30

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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  • Cite this

    Chen, Y., Lo, M., Chang, C., Lee, P., Chung, C., & Tzeng, Y. (2015). Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 556-559). [7388665] (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388665