Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes

S. J. Chang; C. S. Chang; Y. K. Su; P. T. Chang; Y. R. Wu; K. H. Huang; T. P. Chen

doi:10.1109/68.553084

Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, T. P. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

A novel chirped distributed Bragg reflector (CDBR) structure was grown by metal-organic chemical vapor deposition (MOCVD) on a GaAs substrate where the optical thickness of each pair decreases monotonically from the bottom of the structure to the top surface. It was found that the fabricated CDBR structure can reflect yellow-green light with a maximum reflectivity of more than 80%, and it can reflect light more efficiently in a wider wavelength range than the conventional DBR structure. Yellow-green AlGaInP LED's with the CDBR structure and the conventional DBR structure were both fabricated. It was found that by using the CDBR structure, one can achieve a higher luminescence intensity.

Original language	English
Pages (from-to)	182-184
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/68.553084
Publication status	Published - 1997 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.553084

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title = "Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes",

abstract = "A novel chirped distributed Bragg reflector (CDBR) structure was grown by metal-organic chemical vapor deposition (MOCVD) on a GaAs substrate where the optical thickness of each pair decreases monotonically from the bottom of the structure to the top surface. It was found that the fabricated CDBR structure can reflect yellow-green light with a maximum reflectivity of more than 80%, and it can reflect light more efficiently in a wider wavelength range than the conventional DBR structure. Yellow-green AlGaInP LED's with the CDBR structure and the conventional DBR structure were both fabricated. It was found that by using the CDBR structure, one can achieve a higher luminescence intensity.",

author = "Chang, {S. J.} and Chang, {C. S.} and Su, {Y. K.} and Chang, {P. T.} and Wu, {Y. R.} and Huang, {K. H.} and Chen, {T. P.}",

note = "Funding Information: Manuscript received July 2, 1996; revised October 3, 1996. The Work of S. J. Chang, C. S. Chang, and Y. K. Su was supported by the National Science Council under Contract NSC-85-2215-E-006-006. S. J. Chang, C. S. Chang, and Y. K. Su are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Expitaxy Company, Ltd., Hsinchu 300, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(97)01233-0.",

year = "1997",

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doi = "10.1109/68.553084",

language = "English",

volume = "9",

pages = "182--184",

journal = "IEEE Photonics Technology Letters",

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T1 - Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes

AU - Chang, S. J.

AU - Chang, C. S.

AU - Su, Y. K.

AU - Chang, P. T.

AU - Wu, Y. R.

AU - Huang, K. H.

AU - Chen, T. P.

N1 - Funding Information: Manuscript received July 2, 1996; revised October 3, 1996. The Work of S. J. Chang, C. S. Chang, and Y. K. Su was supported by the National Science Council under Contract NSC-85-2215-E-006-006. S. J. Chang, C. S. Chang, and Y. K. Su are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Expitaxy Company, Ltd., Hsinchu 300, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(97)01233-0.

PY - 1997/2

Y1 - 1997/2

N2 - A novel chirped distributed Bragg reflector (CDBR) structure was grown by metal-organic chemical vapor deposition (MOCVD) on a GaAs substrate where the optical thickness of each pair decreases monotonically from the bottom of the structure to the top surface. It was found that the fabricated CDBR structure can reflect yellow-green light with a maximum reflectivity of more than 80%, and it can reflect light more efficiently in a wider wavelength range than the conventional DBR structure. Yellow-green AlGaInP LED's with the CDBR structure and the conventional DBR structure were both fabricated. It was found that by using the CDBR structure, one can achieve a higher luminescence intensity.

AB - A novel chirped distributed Bragg reflector (CDBR) structure was grown by metal-organic chemical vapor deposition (MOCVD) on a GaAs substrate where the optical thickness of each pair decreases monotonically from the bottom of the structure to the top surface. It was found that the fabricated CDBR structure can reflect yellow-green light with a maximum reflectivity of more than 80%, and it can reflect light more efficiently in a wider wavelength range than the conventional DBR structure. Yellow-green AlGaInP LED's with the CDBR structure and the conventional DBR structure were both fabricated. It was found that by using the CDBR structure, one can achieve a higher luminescence intensity.

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Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes

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