Circuit design challenges and trends in read sensing schemes for resistive-type emerging nonvolatile memory

Meng Fan Chang, Ku Feng Lin, Ching Hao Chuang, Li Yue Huang, Tun Fei Chien, Shyh Shyuan Sheu, Keng Li Su, Heng Yuan Lee, Frederick T. Chen, Chen Hsin Lien, Ping Cheng Chen, Lih Yih Chiou, Tzu Kun Ku, Ming Jinn Tsai, Ming Jer Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Nonvolatile memory has become a bottleneck in attempts to reduce the energy consumption of electronic systems. Several emerging forms of nonvolatile memory have shown promise in overcoming these difficulties, achieving faster write speeds and lower power operations than those afforded by Flash memories. Unfortunately, constraints related to bitline bias-voltage, small read cell current, and process variation detract considerably from the efficiency of read operations. This paper provides a review of the challenges and trends associated with the read sensing circuitry used in emerging nonvolatile memories.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - 2012
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 2012 Oct 292012 Nov 1

Publication series

NameICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period12-10-2912-11-01

All Science Journal Classification (ASJC) codes

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

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