Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning

Kuo Hsiu Wei, Chi Cheng Hung, Yu Sheng Wang, Chuan Pu Liu, Kei Wei Chen, Ying Lang Wang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalThin Solid Films
Volume618
DOIs
Publication statusPublished - 2016 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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