Cold-walled, in-situ sulfurization of Cu-In alloys

Chia Hung Tsai, Jyh-Ming Ting, Wen Hsien Ho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This article reports cold-walled, in-situ sulfurization of Cu11In9 for the formation of CuInS2. The deposition of the precursor Cu-In layered films, the thermal annealing of the layered films, and the subsequent sulfurization of the annealed films were all performed in chamber without breaking the vacuum. The sulfurization was conducted at various pressures and temperatures under a 10% H2S/Ar mixture. Conversion of the Cu11In9 phase to the desired CuInS2 phase was achieved in 1 h at 146.7 Pa and 550 °C or at 1000 Pa and 450 °C. The CuInS2 films obtained show low resistivity of the order of 10- 1 Ω-cm and absorbance > 90%. A CuInS2 film with a rougher surface exhibits a higher absorption coefficient.

Original languageEnglish
Pages (from-to)4731-4734
Number of pages4
JournalThin Solid Films
Volume517
Issue number17
DOIs
Publication statusPublished - 2009 Jul 1

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absorptivity
chambers
Vacuum
Annealing
vacuum
electrical resistivity
annealing
Temperature
temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Tsai, Chia Hung ; Ting, Jyh-Ming ; Ho, Wen Hsien. / Cold-walled, in-situ sulfurization of Cu-In alloys. In: Thin Solid Films. 2009 ; Vol. 517, No. 17. pp. 4731-4734.
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Cold-walled, in-situ sulfurization of Cu-In alloys. / Tsai, Chia Hung; Ting, Jyh-Ming; Ho, Wen Hsien.

In: Thin Solid Films, Vol. 517, No. 17, 01.07.2009, p. 4731-4734.

Research output: Contribution to journalArticle

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AB - This article reports cold-walled, in-situ sulfurization of Cu11In9 for the formation of CuInS2. The deposition of the precursor Cu-In layered films, the thermal annealing of the layered films, and the subsequent sulfurization of the annealed films were all performed in chamber without breaking the vacuum. The sulfurization was conducted at various pressures and temperatures under a 10% H2S/Ar mixture. Conversion of the Cu11In9 phase to the desired CuInS2 phase was achieved in 1 h at 146.7 Pa and 550 °C or at 1000 Pa and 450 °C. The CuInS2 films obtained show low resistivity of the order of 10- 1 Ω-cm and absorbance > 90%. A CuInS2 film with a rougher surface exhibits a higher absorption coefficient.

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