This article reports cold-walled, in-situ sulfurization of Cu11In9 for the formation of CuInS2. The deposition of the precursor Cu-In layered films, the thermal annealing of the layered films, and the subsequent sulfurization of the annealed films were all performed in chamber without breaking the vacuum. The sulfurization was conducted at various pressures and temperatures under a 10% H2S/Ar mixture. Conversion of the Cu11In9 phase to the desired CuInS2 phase was achieved in 1 h at 146.7 Pa and 550 °C or at 1000 Pa and 450 °C. The CuInS2 films obtained show low resistivity of the order of 10- 1 Ω-cm and absorbance > 90%. A CuInS2 film with a rougher surface exhibits a higher absorption coefficient.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry