TY - GEN
T1 - Collective-effect state variables for post-CMOS logic applications
AU - Chen, A.
AU - Jacob, A. P.
AU - Sung, C. Y.
AU - Wang, K. L.
AU - Khitun, A.
AU - Porod, W.
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.
AB - Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.
UR - http://www.scopus.com/inward/record.url?scp=71049140077&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71049140077&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:71049140077
SN - 9784863480094
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 132
EP - 133
BT - 2009 Symposium on VLSI Technology, VLSIT 2009
T2 - 2009 Symposium on VLSI Technology, VLSIT 2009
Y2 - 16 June 2009 through 18 June 2009
ER -