Collective-effect state variables for post-CMOS logic applications

A. Chen; A. P. Jacob; C. Y. Sung; K. L. Wang; A. Khitun; W. Porod

Collective-effect state variables for post-CMOS logic applications

A. Chen, A. P. Jacob, C. Y. Sung, K. L. Wang, A. Khitun, W. Porod

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	132-133
Number of pages	2
Publication status	Published - 2009
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2009 Symposium on VLSI Technology, VLSIT 2009
Country	Japan
City	Kyoto
Period	09-06-16 → 09-06-18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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Cite this

@inproceedings{5e03ff23594a46bcba7e3bfe12d89e56,

title = "Collective-effect state variables for post-CMOS logic applications",

abstract = "Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.",

author = "A. Chen and Jacob, {A. P.} and Sung, {C. Y.} and Wang, {K. L.} and A. Khitun and W. Porod",

year = "2009",

language = "English",

isbn = "9784863480094",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "132--133",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

}

TY - GEN

T1 - Collective-effect state variables for post-CMOS logic applications

AU - Chen, A.

AU - Jacob, A. P.

AU - Sung, C. Y.

AU - Wang, K. L.

AU - Khitun, A.

AU - Porod, W.

PY - 2009

Y1 - 2009

N2 - Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.

AB - Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.

UR - http://www.scopus.com/inward/record.url?scp=71049140077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049140077&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:71049140077

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 132

EP - 133

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -