Collective-effect state variables for post-CMOS logic applications

A. Chen, A. P. Jacob, C. Y. Sung, K. L. Wang, A. Khitun, W. Porod

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Number of pages2
Publication statusPublished - 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562


Conference2009 Symposium on VLSI Technology, VLSIT 2009

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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