Collective-effect state variables for post-CMOS logic applications

A. Chen, A. P. Jacob, C. Y. Sung, K. L. Wang, A. Khitun, W. Porod

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages132-133
Number of pages2
Publication statusPublished - 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09-06-1609-06-18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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