Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack

Kao-Shuo Chang, M. L. Green, J. Suehle, J. Hattrick-Simpersb, I. Takeuchi, K. Ohmori, T. Chikyow, S. De Gendt, P. Majhi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai.xAl xNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φm) directly. Our results show Φm variation is consistent with the variation for the corresponding bulk values. For the Tai.xAlxN y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△Vfb) varied systematically as per our expectation.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages151-159
Number of pages9
Edition2
DOIs
Publication statusPublished - 2008 Nov 17
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period08-05-1808-05-22

Fingerprint

Electrodes
Metals
Chemical analysis
Wavelength dispersive spectroscopy
Scanning
Sputtering
Microscopic examination
Thermodynamic stability
Spectroscopy
X rays
Oxides
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chang, K-S., Green, M. L., Suehle, J., Hattrick-Simpersb, J., Takeuchi, I., Ohmori, K., ... Majhi, P. (2008). Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 151-159). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908627
Chang, Kao-Shuo ; Green, M. L. ; Suehle, J. ; Hattrick-Simpersb, J. ; Takeuchi, I. ; Ohmori, K. ; Chikyow, T. ; De Gendt, S. ; Majhi, P. / Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. pp. 151-159 (ECS Transactions; 2).
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Chang, K-S, Green, ML, Suehle, J, Hattrick-Simpersb, J, Takeuchi, I, Ohmori, K, Chikyow, T, De Gendt, S & Majhi, P 2008, Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. in ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 13, pp. 151-159, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 08-05-18. https://doi.org/10.1149/1.2908627

Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. / Chang, Kao-Shuo; Green, M. L.; Suehle, J.; Hattrick-Simpersb, J.; Takeuchi, I.; Ohmori, K.; Chikyow, T.; De Gendt, S.; Majhi, P.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. p. 151-159 (ECS Transactions; Vol. 13, No. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chang K-S, Green ML, Suehle J, Hattrick-Simpersb J, Takeuchi I, Ohmori K et al. Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 ed. 2008. p. 151-159. (ECS Transactions; 2). https://doi.org/10.1149/1.2908627