TY - GEN
T1 - Combined TiO2/SnO2 material with adding Pt by sol-gel technology for humidity sensor
AU - Chang, Wen Yang
AU - Lin, Yu Cheng
AU - Ke, Wen Wang
AU - Hsieh, Yu Sheng
AU - Kuo, Nai Hao
PY - 2006
Y1 - 2006
N2 - In this work, the sensitivity of the humidity sensor based on hybrid thin films of TiO2/SnO2 nanostructure with Pt dopant was successfully increased. The humidity-sensitive materials, TiO 2/SnO2, were prepared by sol gel technology. The microstructure of the sensing film after calcination was investigated by Field Emission gun Scanning Electron Microscopy (FESEM) and revealed that the metal oxide hybrid had about 10 nm grain size. On order to study the effect of Pt dopant on the humidity-sensitive responses, 1 to 10 ml of Pt standard solution was added into the colloidal solution. To compare the humidity sensor of Pt dopant with that of no Pt dopant, operational frequencies and electrode spacings were set under the relative humidity from 30 % to 95 % at the ambient temperature of 22 °C. We demonstrated that adding Pt dopant remarkably enhances the sensitivity of TiO2/SnO2 humidity sensor, and further decreased the TiO2/SnO2 resistance, which was 3.3 times lower than that without Pt dopant at high humidity.
AB - In this work, the sensitivity of the humidity sensor based on hybrid thin films of TiO2/SnO2 nanostructure with Pt dopant was successfully increased. The humidity-sensitive materials, TiO 2/SnO2, were prepared by sol gel technology. The microstructure of the sensing film after calcination was investigated by Field Emission gun Scanning Electron Microscopy (FESEM) and revealed that the metal oxide hybrid had about 10 nm grain size. On order to study the effect of Pt dopant on the humidity-sensitive responses, 1 to 10 ml of Pt standard solution was added into the colloidal solution. To compare the humidity sensor of Pt dopant with that of no Pt dopant, operational frequencies and electrode spacings were set under the relative humidity from 30 % to 95 % at the ambient temperature of 22 °C. We demonstrated that adding Pt dopant remarkably enhances the sensitivity of TiO2/SnO2 humidity sensor, and further decreased the TiO2/SnO2 resistance, which was 3.3 times lower than that without Pt dopant at high humidity.
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U2 - 10.4028/0-87849-990-3.397
DO - 10.4028/0-87849-990-3.397
M3 - Conference contribution
AN - SCOPUS:35348894412
SN - 0878499903
SN - 9780878499908
T3 - Materials Science Forum
SP - 397
EP - 402
BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
PB - Trans Tech Publications Ltd
T2 - 2005 International Conference on Advanced Manufacture, ICAM2005
Y2 - 28 November 2005 through 2 December 2005
ER -