Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan; Yue Hao; S. J. Cai; Y. S. Tang; R. Li; Y. Y. Wei; L. Wong; Y. L. Chen; K. L. Wang; M. Chen; Y. F. Zhao; R. D. Schrimpf; J. C. Keay; K. I. Galloway

doi:10.1109/TED.2003.814976

Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan, Yue Hao, S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, M. Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. I. Galloway

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Letter › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	1715-1716
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TED.2003.814976
Publication status	Published - 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.814976

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Fan, L., Hao, Y., Cai, S. J., Tang, Y. S., Li, R., Wei, Y. Y., Wong, L., Chen, Y. L., Wang, K. L., Chen, M., Zhao, Y. F., Schrimpf, R. D., Keay, J. C., & Galloway, K. I. (2003). Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters). IEEE Transactions on Electron Devices, 50(7), 1715-1716. https://doi.org/10.1109/TED.2003.814976

@article{4fc705fbdd1f4ea6927bf975750f79fc,

title = "Comment on {"}annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE{"} (multiple letters)",

author = "Long Fan and Yue Hao and Cai, {S. J.} and Tang, {Y. S.} and R. Li and Wei, {Y. Y.} and L. Wong and Chen, {Y. L.} and Wang, {K. L.} and M. Chen and Zhao, {Y. F.} and Schrimpf, {R. D.} and Keay, {J. C.} and Galloway, {K. I.}",

year = "2003",

doi = "10.1109/TED.2003.814976",

language = "English",

volume = "50",

pages = "1715--1716",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

Fan, L, Hao, Y, Cai, SJ, Tang, YS, Li, R, Wei, YY, Wong, L, Chen, YL, Wang, KL, Chen, M, Zhao, YF, Schrimpf, RD, Keay, JC & Galloway, KI 2003, 'Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)', IEEE Transactions on Electron Devices, vol. 50, no. 7, pp. 1715-1716. https://doi.org/10.1109/TED.2003.814976

TY - JOUR

T1 - Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

AU - Fan, Long

AU - Hao, Yue

AU - Cai, S. J.

AU - Tang, Y. S.

AU - Li, R.

AU - Wei, Y. Y.

AU - Wong, L.

AU - Chen, Y. L.

AU - Wang, K. L.

AU - Chen, M.

AU - Zhao, Y. F.

AU - Schrimpf, R. D.

AU - Keay, J. C.

AU - Galloway, K. I.

PY - 2003

Y1 - 2003

UR - http://www.scopus.com/inward/record.url?scp=0043028276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043028276&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.814976

DO - 10.1109/TED.2003.814976

M3 - Letter

AN - SCOPUS:0043028276

SN - 0018-9383

VL - 50

SP - 1715

EP - 1716

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

All Science Journal Classification (ASJC) codes

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Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)