Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan, Yue Hao, S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, M. Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. I. Galloway

Research output: Contribution to journalLetterpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)1715-1716
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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