The fabrication of an active electrically programmable fuse (eFuse) on a silicon-on-insulator (SOI) substrate fully compatible with the current complementary metal-oxide-semiconductor technology is reported. The SOI structure inherently provides an isolation environment for an active eFuse. N- and P-type active fuses are programmed at room temperature and at 125◦C. After programming, the P-type active fuse shows better programming performance than the N-type at both temperatures. The remaining cobalt in the fuse link decreases the programming performance of the N-type active fuse. The formation of diffusion break after programming assists the performance of the P-type active fuse.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials