Communication-diffusion break-assisted programming mode for active electrically programmable fuse

Chang Chien Wong, Sheng Po Chang, Ching Hsiang Tseng, Wei Shou Chen, Shoou Jinn Chang

Research output: Contribution to journalArticle

Abstract

The fabrication of an active electrically programmable fuse (eFuse) on a silicon-on-insulator (SOI) substrate fully compatible with the current complementary metal-oxide-semiconductor technology is reported. The SOI structure inherently provides an isolation environment for an active eFuse. N- and P-type active fuses are programmed at room temperature and at 125C. After programming, the P-type active fuse shows better programming performance than the N-type at both temperatures. The remaining cobalt in the fuse link decreases the programming performance of the N-type active fuse. The formation of diffusion break after programming assists the performance of the P-type active fuse.

Original languageEnglish
Pages (from-to)Q109-Q111
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number6
DOIs
Publication statusPublished - 2018 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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