Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film

Chun Cheng Lin, Cheng Shong Hong, Chih Yu Huang, Yi Chun Chen, Sheng Yuan Chu

Research output: Contribution to journalArticlepeer-review

Abstract

Highly (002)-oriented 3 at% Li-doped zinc oxide (LZO) thin films are fabricated using a radio frequency magnetron sputtering technique with synchronous DC-bias voltages ranging from 0 ∼ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the films, and therefore changes their piezoelectric and dielectric properties. The optimal values of the effective piezoelectric coefficient (19.42 pm/V) and dielectric constant (17.75) are obtained using DC-bias voltages of 20 and 25 V, respectively. The superior piezoelectric performance is due to an improved crystallization of the LZO film, while the superior dielectric performance is owing to an improved thickness uniformity.

Original languageEnglish
Pages (from-to)N40-N42
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number7
DOIs
Publication statusPublished - 2016 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film'. Together they form a unique fingerprint.

Cite this