Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film

Chun Cheng Lin; Cheng Shong Hong; Chih Yu Huang; Yi Chun Chen; Sheng Yuan Chu

doi:10.1149/2.0151607jss

Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film

Chun Cheng Lin, Cheng Shong Hong, Chih Yu Huang, Yi Chun Chen, Sheng Yuan Chu

Research output: Contribution to journal › Article › peer-review

Abstract

Highly (002)-oriented 3 at% Li-doped zinc oxide (LZO) thin films are fabricated using a radio frequency magnetron sputtering technique with synchronous DC-bias voltages ranging from 0 ∼ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the films, and therefore changes their piezoelectric and dielectric properties. The optimal values of the effective piezoelectric coefficient (19.42 pm/V) and dielectric constant (17.75) are obtained using DC-bias voltages of 20 and 25 V, respectively. The superior piezoelectric performance is due to an improved crystallization of the LZO film, while the superior dielectric performance is owing to an improved thickness uniformity.

Original language	English
Pages (from-to)	N40-N42
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	7
DOIs	https://doi.org/10.1149/2.0151607jss
Publication status	Published - 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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title = "Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film",

abstract = "Highly (002)-oriented 3 at% Li-doped zinc oxide (LZO) thin films are fabricated using a radio frequency magnetron sputtering technique with synchronous DC-bias voltages ranging from 0 ∼ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the films, and therefore changes their piezoelectric and dielectric properties. The optimal values of the effective piezoelectric coefficient (19.42 pm/V) and dielectric constant (17.75) are obtained using DC-bias voltages of 20 and 25 V, respectively. The superior piezoelectric performance is due to an improved crystallization of the LZO film, while the superior dielectric performance is owing to an improved thickness uniformity.",

author = "Lin, {Chun Cheng} and Hong, {Cheng Shong} and Huang, {Chih Yu} and Chen, {Yi Chun} and Chu, {Sheng Yuan}",

note = "Funding Information: This study was supported by the Ministry of Science and Technology of Taiwan under grants: NSC 102-2221-E-006-216-MY3, NSC 102-2221-E-006-186-MY3, and MOST 103-2221-E-017-012-MY3. Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society All rights reserved.",

year = "2016",

doi = "10.1149/2.0151607jss",

language = "English",

volume = "5",

pages = "N40--N42",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "7",

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TY - JOUR

T1 - Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film

AU - Lin, Chun Cheng

AU - Hong, Cheng Shong

AU - Huang, Chih Yu

AU - Chen, Yi Chun

AU - Chu, Sheng Yuan

N1 - Funding Information: This study was supported by the Ministry of Science and Technology of Taiwan under grants: NSC 102-2221-E-006-216-MY3, NSC 102-2221-E-006-186-MY3, and MOST 103-2221-E-017-012-MY3. Publisher Copyright: © 2016 The Electrochemical Society All rights reserved.

PY - 2016

Y1 - 2016

N2 - Highly (002)-oriented 3 at% Li-doped zinc oxide (LZO) thin films are fabricated using a radio frequency magnetron sputtering technique with synchronous DC-bias voltages ranging from 0 ∼ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the films, and therefore changes their piezoelectric and dielectric properties. The optimal values of the effective piezoelectric coefficient (19.42 pm/V) and dielectric constant (17.75) are obtained using DC-bias voltages of 20 and 25 V, respectively. The superior piezoelectric performance is due to an improved crystallization of the LZO film, while the superior dielectric performance is owing to an improved thickness uniformity.

AB - Highly (002)-oriented 3 at% Li-doped zinc oxide (LZO) thin films are fabricated using a radio frequency magnetron sputtering technique with synchronous DC-bias voltages ranging from 0 ∼ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the films, and therefore changes their piezoelectric and dielectric properties. The optimal values of the effective piezoelectric coefficient (19.42 pm/V) and dielectric constant (17.75) are obtained using DC-bias voltages of 20 and 25 V, respectively. The superior piezoelectric performance is due to an improved crystallization of the LZO film, while the superior dielectric performance is owing to an improved thickness uniformity.

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JF - ECS Journal of Solid State Science and Technology

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ER -

Communication-effects of DC-bias voltage on piezoelectric and dielectric properties of Li-doped ZnO thin film

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