Abstract
Editor's note: FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.
Original language | English |
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Article number | 5432322 |
Pages (from-to) | 44-50 |
Number of pages | 7 |
Journal | IEEE Design and Test of Computers |
Volume | 27 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 Mar |
All Science Journal Classification (ASJC) codes
- Software
- Hardware and Architecture
- Electrical and Electronic Engineering