Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

Sriramkumar Venugopalan; Muhammed A. Kari; Ali M. Niknejad; Chenming Hu; Darsen D. Lu

Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

Sriramkumar Venugopalan, Muhammed A. Kari, Ali M. Niknejad, Chenming Hu, Darsen D. Lu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.

Original language	English
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	292-295
Number of pages	4
ISBN (Electronic)	9780615717562
Publication status	Published - 2012
Event	2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States Duration: 2012 Sept 5 → 2012 Sept 7

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
Country/Territory	United States
City	Denver
Period	12-09-05 → 12-09-07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Cite this

Venugopalan, S., Kari, M. A., Niknejad, A. M., Hu, C., & Lu, D. D. (2012). Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings (pp. 292-295). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc..

Venugopalan, Sriramkumar ; Kari, Muhammed A. ; Niknejad, Ali M. et al. / Compact models for real device effects in FinFETs : Quantum-mechanical confinement and double junctions in FinFETs. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc., 2012. pp. 292-295 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{3b90e5cde2aa487cabae0713fb733132,

title = "Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs",

abstract = "A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.",

author = "Sriramkumar Venugopalan and Kari, {Muhammed A.} and Niknejad, {Ali M.} and Chenming Hu and Lu, {Darsen D.}",

note = "Funding Information: This work was supported by Semiconductor Research Corporation (SRC), Task IDs : 1149 and 2055 Publisher Copyright: {\textcopyright} 2012 IEEE.; 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 ; Conference date: 05-09-2012 Through 07-09-2012",

year = "2012",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "292--295",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings",

address = "United States",

}

Venugopalan, S, Kari, MA, Niknejad, AM, Hu, C & Lu, DD 2012, Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 292-295, 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012, Denver, United States, 12-09-05.

Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs. / Venugopalan, Sriramkumar; Kari, Muhammed A.; Niknejad, Ali M. et al.
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc., 2012. p. 292-295 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Compact models for real device effects in FinFETs

T2 - 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012

AU - Venugopalan, Sriramkumar

AU - Kari, Muhammed A.

AU - Niknejad, Ali M.

AU - Hu, Chenming

AU - Lu, Darsen D.

PY - 2012

Y1 - 2012

N2 - A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.

AB - A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.

UR - http://www.scopus.com/inward/record.url?scp=85088029201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85088029201&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85088029201

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 292

EP - 295

BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 5 September 2012 through 7 September 2012

ER -

Venugopalan S, Kari MA, Niknejad AM, Hu C, Lu DD. Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc. 2012. p. 292-295. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

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All Science Journal Classification (ASJC) codes

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