Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes

Wen Chau Liu, Hsi Jen Pan, Huey Ing Chen, Kun Wei Lin, Chik Kai Wang

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)


In this work, the hydrogen response characteristics and sensing properties of catalytic Pd metal-oxide-semiconductor (MOS) Schottky diodes based on both GaAs and InP substrates are comparatively investigated. The behaviors of interface Fermi-level pinning causing the apparent difference in the barrier height modulation and the sensitivity are discussed. Furthermore, the effects of temperature and hydrogen concentration in the initial rate of change in current and the response time are examined. In order to study the steady-state reaction kinetics, we also performed the Langmuir analysis to estimate the values of initial heat of adsorption for both devices. Based on the adsorption isotherm of Temkin type, the interface coverage dependent heat of adsorption is responsible for the wide hydrogen sensing range. From the theoretical prediction, both devices have a very low sensitivity limit under atmospheric conditions.

Original languageEnglish
Pages (from-to)6254-6259
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number11
Publication statusPublished - 2001 Nov

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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