TY - JOUR
T1 - Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes
AU - Liu, Wen Chau
AU - Pan, Hsi Jen
AU - Chen, Huey Ing
AU - Lin, Kun Wei
AU - Wang, Chik Kai
PY - 2001/11
Y1 - 2001/11
N2 - In this work, the hydrogen response characteristics and sensing properties of catalytic Pd metal-oxide-semiconductor (MOS) Schottky diodes based on both GaAs and InP substrates are comparatively investigated. The behaviors of interface Fermi-level pinning causing the apparent difference in the barrier height modulation and the sensitivity are discussed. Furthermore, the effects of temperature and hydrogen concentration in the initial rate of change in current and the response time are examined. In order to study the steady-state reaction kinetics, we also performed the Langmuir analysis to estimate the values of initial heat of adsorption for both devices. Based on the adsorption isotherm of Temkin type, the interface coverage dependent heat of adsorption is responsible for the wide hydrogen sensing range. From the theoretical prediction, both devices have a very low sensitivity limit under atmospheric conditions.
AB - In this work, the hydrogen response characteristics and sensing properties of catalytic Pd metal-oxide-semiconductor (MOS) Schottky diodes based on both GaAs and InP substrates are comparatively investigated. The behaviors of interface Fermi-level pinning causing the apparent difference in the barrier height modulation and the sensitivity are discussed. Furthermore, the effects of temperature and hydrogen concentration in the initial rate of change in current and the response time are examined. In order to study the steady-state reaction kinetics, we also performed the Langmuir analysis to estimate the values of initial heat of adsorption for both devices. Based on the adsorption isotherm of Temkin type, the interface coverage dependent heat of adsorption is responsible for the wide hydrogen sensing range. From the theoretical prediction, both devices have a very low sensitivity limit under atmospheric conditions.
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U2 - 10.1143/jjap.40.6254
DO - 10.1143/jjap.40.6254
M3 - Article
AN - SCOPUS:0036155338
SN - 0021-4922
VL - 40
SP - 6254
EP - 6259
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11
ER -