Comparative studies of δ -doped In0.45 Al0.55 as in0.53 Ga0.47 AsGaAs metamorphic HEMTs with Au, TiAu, NiAu, and PtAu gates

Ke Hua Su, Wei Chou Hsu, Ching Sung Lee, I. Liang Chen, Yeong Jia Chen, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

This work comprehensively investigates device characteristics of a δ -doped In0.45 Al0.55 As In0.53 Ga0.47 AsGaAs metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including TiAu, NiAu, PtAu, and Au. The impact-ionization-related kink effects on the device performances are found to be significantly improved by depositing the high-barrier-height gate alloys. As compared to conventional Au-gated metamorphic HEMTs, the devices with TiAu, NiAu, and PtAu gate alloys have shown superior low-noise, high-power, and high-linearity gain performances, respectively.

Original languageEnglish
Article number065611JES
Pages (from-to)G996-G1000
JournalJournal of the Electrochemical Society
Volume153
Issue number11
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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