Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Ssu I. Fu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

Original languageEnglish
Pages (from-to)864-869
Number of pages6
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - 2004 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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