Abstract
The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.
| Original language | English |
|---|---|
| Pages (from-to) | 864-869 |
| Number of pages | 6 |
| Journal | Semiconductor Science and Technology |
| Volume | 19 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2004 Jul 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
}
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure. / Chen, Chun Yuan; Cheng, Shiou Ying; Chiou, Wen Hui; Chuang, Hung Ming; Fu, Ssu I.; Liu, Wen-Chau.
In: Semiconductor Science and Technology, Vol. 19, No. 7, 01.07.2004, p. 864-869.Research output: Contribution to journal › Article
TY - JOUR
T1 - Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
AU - Chen, Chun Yuan
AU - Cheng, Shiou Ying
AU - Chiou, Wen Hui
AU - Chuang, Hung Ming
AU - Fu, Ssu I.
AU - Liu, Wen-Chau
PY - 2004/7/1
Y1 - 2004/7/1
N2 - The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.
AB - The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.
UR - http://www.scopus.com/inward/record.url?scp=3142658799&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142658799&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/19/7/015
DO - 10.1088/0268-1242/19/7/015
M3 - Article
VL - 19
SP - 864
EP - 869
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
ER -