Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Ssu I. Fu, Wen-Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

Original languageEnglish
Pages (from-to)864-869
Number of pages6
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - 2004 Jul 1

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Electric breakdown
heterojunctions
emitters
electrical faults
accumulators
direct current
Temperature
Electric potential
low currents
low voltage
injection
temperature
5,5'-dihydroxy-4,4'-bitryptamine

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, Chun Yuan ; Cheng, Shiou Ying ; Chiou, Wen Hui ; Chuang, Hung Ming ; Fu, Ssu I. ; Liu, Wen-Chau. / Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 7. pp. 864-869.
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Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure. / Chen, Chun Yuan; Cheng, Shiou Ying; Chiou, Wen Hui; Chuang, Hung Ming; Fu, Ssu I.; Liu, Wen-Chau.

In: Semiconductor Science and Technology, Vol. 19, No. 7, 01.07.2004, p. 864-869.

Research output: Contribution to journalArticle

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T1 - Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

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AU - Liu, Wen-Chau

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AB - The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

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