Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Chun Yuan Chen; Shiou Ying Cheng; Wen Hui Chiou; Hung Ming Chuang; Ssu I. Fu; Wen Chau Liu

doi:10.1088/0268-1242/19/7/015

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Ssu I. Fu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

Original language	English
Pages (from-to)	864-869
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	19
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/19/7/015
Publication status	Published - 2004 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{974ab7c9be234321a698f2f8e6b625c3,

title = "Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure",

abstract = "The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 {\AA} InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.",

author = "Chen, {Chun Yuan} and Cheng, {Shiou Ying} and Chiou, {Wen Hui} and Chuang, {Hung Ming} and Fu, {Ssu I.} and Liu, {Wen Chau}",

year = "2004",

month = jul,

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language = "English",

volume = "19",

pages = "864--869",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

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}

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure. / Chen, Chun Yuan; Cheng, Shiou Ying; Chiou, Wen Hui; Chuang, Hung Ming; Fu, Ssu I.; Liu, Wen Chau.

In: Semiconductor Science and Technology, Vol. 19, No. 7, 07.2004, p. 864-869.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chiou, Wen Hui

AU - Chuang, Hung Ming

AU - Fu, Ssu I.

AU - Liu, Wen Chau

PY - 2004/7

Y1 - 2004/7

N2 - The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

AB - The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

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