Abstract
The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000 Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.
Original language | English |
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Pages (from-to) | 864-869 |
Number of pages | 6 |
Journal | Semiconductor Science and Technology |
Volume | 19 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2004 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry