Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Ching Sung Lee, Chun Tse Hung, Bo Yi Chou, Wei Chou Hsu, Han Yin Liu, Chiu Sheng Ho, Ying Nan Lai

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.

Original languageEnglish
Article number065006
JournalSemiconductor Science and Technology
Volume27
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Ozone
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Oxides
ozone
aluminum gallium arsenides
Metals
Passivation
Oxidation
oxidation
oxides
Water
water
passivity
Noise figure
Surface states
breakdown
Oxide semiconductors
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique",
abstract = "Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.",
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language = "English",
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issn = "0268-1242",
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Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique. / Lee, Ching Sung; Hung, Chun Tse; Chou, Bo Yi; Hsu, Wei Chou; Liu, Han Yin; Ho, Chiu Sheng; Lai, Ying Nan.

In: Semiconductor Science and Technology, Vol. 27, No. 6, 065006, 01.06.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

AU - Lee, Ching Sung

AU - Hung, Chun Tse

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Ho, Chiu Sheng

AU - Lai, Ying Nan

PY - 2012/6/1

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AB - Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.

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