Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Ching Sung Lee; Chun Tse Hung; Bo Yi Chou; Wei Chou Hsu; Han Yin Liu; Chiu Sheng Ho; Ying Nan Lai

doi:10.1088/0268-1242/27/6/065006

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Ching Sung Lee, Chun Tse Hung, Bo Yi Chou, Wei Chou Hsu, Han Yin Liu, Chiu Sheng Ho, Ying Nan Lai

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Al _0.22Ga _0.78As/In _0.24Ga _0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.

Original language	English
Article number	065006
Journal	Semiconductor Science and Technology
Volume	27
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/27/6/065006
Publication status	Published - 2012 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/27/6/065006

Cite this

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title = "Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique",

abstract = "Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.",

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T1 - Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

AU - Lee, Ching Sung

AU - Hung, Chun Tse

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Ho, Chiu Sheng

AU - Lai, Ying Nan

PY - 2012/6/1

Y1 - 2012/6/1

N2 - Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.

AB - Al 0.22Ga 0.78As/In 0.24Ga 0.76As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300450 K are also studied.

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Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Abstract

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