Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Ching Sung Lee, Wei Chou Hsu, Han Yin Liu, Si Fu Chen, Yu Chang Chen, Shen Tin Yang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Systematic designs to achieve normally-off operation and improved device performance for Al0.26Ga0.74N/AlN/GaN high electron mobility transistors (HEMTs) grown on a Si substrate are investigated in this work. The step-by-step approach includes: (1) devising a thin AlGaN/AlN composite barrier, (2) introducing fluoride ions within the active region by using CF4 plasma treatment, (3) growing the Al2O3 oxide passivation layers within gate-drain/source regions by using a cost-effective ozone water oxidization technique, and (4) integrating a metal-oxide-semiconductor gate (MOS-gate) design with high-k Al2O3 gate dielectric. Devices with four different evolutionary gate structures have been compared and studied. Variations of threshold voltage (Vth), Hooge coefficients (αH), maximum drain-source current density (IDS, max), maximum extrinsic transconductance (gm, max), gate-voltage swing (GVS) linearity, two-terminal gate-drain breakdown/turn-on voltages (BVGD/Von), on/off current ratio (Ion/Ioff), and high-temperature characteristics up to 450 K are also investigated.

Original languageEnglish
Pages (from-to)39-43
Number of pages5
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2017 Aug 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Comparative studies of normally-off Al<sub>0.26</sub>Ga<sub>0.74</sub>N/AlN/GaN/Si high electron mobility transistors with different gate structures'. Together they form a unique fingerprint.

Cite this