TY - JOUR
T1 - Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique
AU - Lee, Ching Sung
AU - Hsu, Wei Chou
AU - Chiang, Bo Jung
AU - Liu, Han Yin
AU - Lee, Hsin Yuan
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, R.O.C. under contract no. of MOST 103-2221-E-035-081-MY2 and MOST 105-2221-E-035-076-MY3.
Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/4/5
Y1 - 2017/4/5
N2 - Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.
AB - Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.
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U2 - 10.1088/1361-6641/aa6374
DO - 10.1088/1361-6641/aa6374
M3 - Article
AN - SCOPUS:85018995459
SN - 0268-1242
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
M1 - 055012
ER -