Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Ching Sung Lee, Wei Chou Hsu, Bo Jung Chiang, Han Yin Liu, Hsin Yuan Lee

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6 Citations (Scopus)


Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.

Original languageEnglish
Article number055012
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2017 Apr 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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